The technique makes use of extreme light concentration at the sharp tip of Atomic Force Microscope (AFM), yielding infrared and terahertz images with a spatial independent of the wavelength. Part of the team had pioneered this technique over the last decade, enabling nanoscale resolved chemical recognition of nanostructured materials and local conductivity in industrial semiconductor devices. The non-invasive mapping of strain with nanoscale spatial resolution, however, is still a challenge.Ī promising route for highly sensitive and non-invasive mapping of nanoscale material properties is scattering-type Scanning Near-field Optical Microscopy (s-SNOM). Visualizing strain at length scales below 100 nm is a key requirement in modern metrology because strain determines the mechanical and electrical properties of high-performance ceramics or modern electronic devices, respectively. The method, which is based on near-field microscopy, opens new avenues for analyzing mechanical properties of high-performance materials or for contact-free mapping of local conductivity in strain-engineered electronic devices.
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